LONDON — Samsung Electronics has validated what it suggests is the first 40-nm DRAM chip and module, a 1-Gigabit DDR2 compliant device.

The part has been certified in the Intel Platform Validation program for use with the processor maker's GM45 series Express mobile chipsets.

Samsung said it's is already developing a 2Gbit DDR3 device for mass production by the end of 2009, again using 40-nm process technology.

The company stressed the latest geometry process would drive further reductions in voltage against a 50-nm class device, and it expects this to translate to about a 30 percent reduction in power.

The finer DRAM technology node also delivers an approximately 60 percent increase in productivity over 50-nm class process technology.