Fairchild Semiconductor is offering designers a dual MOSFET solution that delivers higher efficiency and power density for notebooks, netbooks, servers, telecom and other DC-DC designs.
The FDMC8200 integrates an optimized control (high-side) and synchronous (low-side) 30V N-Channel MOSFET into one 3 mm x 3 mm MLP module - all designed with Fairchild's advanced-performance PowerTrench 7 MOSFET technology. The technology yields a low RDS(ON), total gate charge (QG) and Miller Charge (QGD) - enhancements that result in high efficiency by minimizing conduction and switching losses. The FDMC8200 typically features an RDS(ON) of 24 mOhm on the high side and 9.5 mOhm on the low side. The device can deliver more than 9 A of current for mainstream computing applications, and the optimized pinout and footprint provides ease of layout and routing, simplifying design.
The FDMC8200 addresses key design challenges of DC-DC applications, space conservation and thermal performance, through its advanced packaging technology and proprietary PowerTrench 7 process. The compact and thermally-enhanced 3 mm x 3 mm Power33 MLP package, and PowerTrench 7 technology, offers high power density, high power efficiency and thermal performance.
The dual MOSFET is part of a comprehensive portfolio of advanced MOSFET technology that provides a wide range of breakdown voltages and state of the art packaging technology for efficient power management and low thermal resistance. The portfolio includes the FDMS9600S and FDMS9620S, integrated FET modules that also reduce board space and enable synchronous buck designs to achieve higher conversion efficiency.
Availability and Pricing
Samples are available now. Price (each, 1000 pcs.): US$ 0.50
Datasheet for: FDMC8200
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